| PART |
Description |
Maker |
| 1N5384B 1N5346B |
5.0 WATTS ZENER DIODE EXCELLENT CLAMPING CAPABILITY
|
First Components Intern...
|
| UNIFOX-C-VDE-DB |
Excellent transformation ratios for excellent gripping and cutting performance
|
PHOENIX CONTACT
|
| HGT1S20N35G3VLS HGT1S20N35G3VL HGTP20N35G3VL FN400 |
72 MACROCELL 5 VOLT ISP CPLD - NOT RECOMMENDED for NEW DESIGN
20A, 350V N-Channel, Logic Level, Voltage Clamping IGBTs
From old datasheet system
20A/ 350V N-Channel/ Logic Level/ Voltage Clamping IGBTs
|
http://
INTERSIL[Intersil Corporation]
|
| BV03CL |
Low clamping voltage
|
Shenzhen Bencent Electr...
|
| RLP1N06CLE |
1A/ 55V/ 0.750 Ohm/Voltage Clamping/ Current Limited/ N-Channel Power MOSFET
1A, 55V, 0.750 Ohm,Voltage Clamping, Current Limited, N-Channel Power MOSFET
1A, 55V, 0.750 Ohm,Voltage Clamping,Current Limited, N-Channel Power MOSFET(1A, 55V, 0.750 Ω,电压箝位,电流限定,N沟道功率MOS场效应管)
|
INTERSIL[Intersil Corporation]
|
| 3381P |
Low ESD clamping voltage
|
Gennum Corporation
|
| B25556-J3905-K003 |
MPK DC Capacitors GTO Clamping
|
EPCOS[EPCOS]
|
| TCF6000 TCF6000D TCF6000_D ON2975 |
From old datasheet system
PERIPHERAL CLAMPING ARRAY
|
MOTOROLA[Motorola, Inc]
ON Semi
|
| GTO2940-12RP |
GTO Clamping Capacitors, Self-healing, Segmented
|
Vishay Intertechnology,Inc.
|
| BAS125-04 BAS125-05 BAS125-06 Q62702-D1316 BAS125 |
Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications) 2 ELEMENT, SILICON, SIGNAL DIODE
Circular Connector; Series:MS3106R; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No
Silicon Schottky Diodes (For low-loss fast-recovery meter protection bias isolation and clamping applications)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
